Study of the Thermal Properties and Lattice Disorder Effects in CdTe–Based Crystals: CdBeTe, CdMnTe, and CdZnTe

Mixed semiconductor ternary crystals were grown using the Bridgman–Stockbarger method. This is a high–temperature and high–pressure crystal growth Cd1–xBexTe in range of composition 0 < x 0.1, such as 0.00, 0.01, 0.03, 0.05, 0.1. The main goal this paper was to compare thermal properties CdBeTe with previously CdMnTe CdZnTe–mixed crystals. photopyroelectric technique applied examine properties. diffusivity effusivity values obtained after testing all samples, conductivity calculated then. As such, complete characterization carried out. For further characterization, versus checked by applying Sadao Adachi model. Thanks that, we able determine total resistivity additional which arises from lattice disorder. disorder effects arising substituting native atom foreign one characterized for We looking best substitution Cd CdTe matrix based on compounds’ It turned out that Zn Mn introduce similar disorder, Be being highest one.